page . 1 march 31,2010-rev.00 pjp4n60 / PJF4N60 fea tures ? 4a , 600v, r ds(on) =2.4 @v gs =10v, i d =2.0a ? low on resistance ? fa st switching ? low gate charge ? fully chara cterized a vala nche v oltage a nd current ? spe ci ally de sigened f or ac ada pter , battery charge a nd smps ? in compli a nce with eu rohs 2002/95/ec dire ctives mechanical da ta ? ca se: t o-220ab / it o-220ab molded pla stic ? t ermin als : soldera ble per mil-st d-750,method 2026 or dering informa tion 600v n-channel enhancement mode mosfet m axi mum ra tings a nd thermal chara cteristics (t a =25 o c unle ss otherwise noted ) note : 1. m axi mum dc current li mited by the pa ck age p an jit reser ves the right t o improve product design,functions and reliability without notice internal schematic diagram drain gate source 1 2 3 to-220ab / ito-220ab 1 2 3 g d s to-220ab ito-220ab 1 2 3 g d s type marking package packing pjp4n60 p4n60 to-220ab 50pcs/tube pjf4 n60 f4n60 ito-220ab 50pcs/tube pa ra m e te r s ym b o l p j p 4 n6 0 p j f 4 n6 0 uni ts d r a i n- s o ur c e vo lta g e v d s 6 0 0 v ga te - s o ur c e vo lta g e v gs + 3 0 v c o nti nuo us d ra i n c ur re nt i d 4 4 a p uls e d d r a i n c urr e nt 1 ) i d m 1 6 1 6 a m a xi m um p o we r d i s s i p a ti o n d e ra ti ng f a o to r t a =2 5 o c p d 7 0 0 .5 6 2 6 0 .2 w op e ra ti ng j unc t i o n a nd s to ra g e te m p e r a ture ra ng e t j ,t s tg -5 5 to +1 5 0 o c aval anche energy with single pulse i as =4.4a, vdd=85v, l=30mh e a s 3 3 0 m j jun ction-to-case thermal resistance r j c 1 .7 5 4 .8 o c / w junc tion-to ambient thermal resistance(pcb mounted) 2 r j a 6 2 . 5 1 0 0 o c / w
page . 2 march 31,2010-rev.00 pjp4n60 / PJF4N60 electrical characteristics ( t a =25 o c unless otherwise noted ) note : plus te st : pluse w idth < 300us, duty cycle < 2%. p a r a m e te r s ymb o l te s t c o nd i ti o n m i n. typ . ma x. uni ts s ta ti c d r a i n- s o urc e b re a k d o wn vo lta g e b v d s s v gs =0 v, i d =2 5 0 ua 6 0 0 - - v ga te thre s ho ld vo lta g e v gs (th) v d s =v gs , i d =2 5 0 ua 2 .0 - 4 .0 v d r a i n- s o ur c e on- s ta t e re s i s ta nc e r d s ( o n) v gs = 10v, i d = 2 .0 a - 2.0 2.4 ze r o ga te vo lta g e d r a i n c ur r e nt i d s s v ds =600v, v gs =0v - - 10 ua gate body leakage i gs s v gs = + 3 0 v, v d s =0 v - - + 1 0 0 n dynamic to ta l ga te c ha r g e q g v d s =4 8 0 v, i d =4 a v gs =1 0 v - 1 7 .2 - nc ga t e - s o ur c e c ha rg e q g s - 4 .6 - ga te - d r a i n c ha r g e q g d - 5.2 - tur n - on d e la y ti me t d (o n) v dd =300v ,i d =4a v gs =10v , r g =25 - 11.6 16.8 ns tur n- on ri s e ti m e t r - 10.6 15.2 tur n - off d e la y ti me t d (o ff) - 2 5 .8 3 6 .8 tur n - off f a ll ti m e t f - 9 .2 1 4 .2 inp u t c a p a c i ta nc e c i s s v d s =2 5 v, v gs =0 v f=1 . 0 mh z - 5 6 0 6 8 0 p f out p ut c a p a c i t a nc e c o s s - 55 66 re ve r s e tra ns f e r c a p a c i ta nc e c rs s - 5.2 9.6 s o urc e - d ra i n d i o d e ma x. d i o d e f o rwa rd c urr e nt i s - - - 4 .0 a ma x. p uls e d s o ur c e c urr e nt i s m - - - 1 6 a d i o d e f o r wa r d vo lta g e v s d i s =4 a , v gs =0 v - - 1 .4 v re ve r s e re c o ve r y ti m e t r r v gs =0 v, i f =4 a d i /d t=1 0 0 a /us - 3 0 0 - ns re ve r s e re c o ve r y c ha r g e q rr - 2 .2 - uc
fig.1 output characteristric pjp4n60 / PJF4N60 typical characteristics curves ( ta=25 , u n less otherwise noted) fig.2 transfer characteristric 0 1 2 3 4 5 6 7 8 0 5 10 1 5 20 25 30 i d - drain-to-source current (a) v ds - drain-to-source voltage (v) v gs = 20v~ 7.0v 5.0v 6.0v 1 1.5 2 2. 5 3 3 .5 4 4.5 5 0 1 2 3 4 5 6 7 8 r ds(on) - on resistance( ) i d - drain current (a) v gs = 20v v gs =10v 0 2 4 6 8 10 3 4 5 6 7 8 9 10 r ds(on) - on resistance( ) v gs - gate-to-source voltage (v) i d =2a t j =25 o c 0.01 0.1 1 10 1 0 0 2 3 4 5 6 7 8 i d - drain source current (a) v gs - gate-to-source voltage (v) v ds =50v t j = 125 o c 25 o c -55 o c fig.1 output characteristric pjp4n60 / PJF4N60 typical characteristics curves ( ta=25 , u n less otherwise noted) fig.2 transfer characteristric fig.3 on resistance vs drain current fig.4 on resistance vs gate to source voltage march 31,2010-rev.00 fig.5 on resistance vs junction temperature fig.6 capacitance page . 3 0 1 2 3 4 5 6 7 8 0 5 10 1 5 20 25 30 i d - drain-to-source current (a) v ds - drain-to-source voltage (v) v gs = 20v~ 7.0v 5.0v 6.0v 1 1.5 2 2. 5 3 3 .5 4 4.5 5 0 1 2 3 4 5 6 7 8 r ds(on) - on resistance( ) i d - drain current (a) v gs = 20v v gs =10v 0 200 400 6 00 800 1000 1200 0 5 10 15 20 25 c - capacitance (pf) v ds - drain-to-source voltage (v) ciss f = 1mhz v gs = 0 v crss coss 0 2 4 6 8 10 3 4 5 6 7 8 9 10 r ds(on) - on resistance( ) v gs - gate-to-source voltage (v) i d =2a t j =25 o c 0.5 0.7 0.9 1 .1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 -50 -25 0 25 50 75 100 125 150 r ds(on) - on-resistance(normalized) t j - junction temperature ( o c) v gs =10 v i d =2 . 0a 0.01 0.1 1 10 1 0 0 2 3 4 5 6 7 8 i d - drain source current (a) v gs - gate-to-source voltage (v) v ds =50v t j = 125 o c 25 o c -55 o c
fig. 7 gate charge waveform pjp4n60 / PJF4N60 typical characteristics curves ( ta=25 , u n less otherwise noted) fig.8 source-drain diode forward voltage 0.8 0.9 1 1. 1 1 .2 -50 -25 0 25 50 75 100 125 150 bv dss - breakdown voltage(normalized) t j - junction temperature ( o c) i d = 250 a 0.01 0.1 1 10 0 . 2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source-to-drain voltage (v) t j = 125 o c 25 o c v gs = 0v -55 o c 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 16 18 v gs - gate-to-source voltage (v) q g - gate charge (nc) i d =4.0a v ds =480v v ds =300v v ds =120v fig. 7 gate charge waveform pjp4n60 / PJF4N60 typical characteristics curves ( ta=25 , u n less otherwise noted) fig.8 source-drain diode forward voltage fig.9 breakdown voltage vs junction temperature march 31,2010-rev.00 page. 4 0.8 0.9 1 1. 1 1 .2 -50 -25 0 25 50 75 100 125 150 bv dss - breakdown voltage(normalized) t j - junction temperature ( o c) i d = 250 a 0.01 0.1 1 10 0 . 2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source-to-drain voltage (v) t j = 125 o c 25 o c v gs = 0v -55 o c 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 16 18 v gs - gate-to-source voltage (v) q g - gate charge (nc) i d =4.0a v ds =480v v ds =300v v ds =120v
page . 5 march 31,2010-rev.00 pjp4n60 / PJF4N60 copyright panjit international, inc 2010 the inf ormation pre sented in this document is believed to be a ccurate a nd reli a ble. the spe cif ication s a nd inf ormation here in are subject to change without notice. pan jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. pan jit products are not authorized for use in life support devices or systems. pan jit does not convey any license under its patent rights or rights of others. legal st a tement
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